I772 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for use in output stage of 10w audio amplifier, voltage regulator, dc-dc converter, and relay driver. characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -30 v emitter-base voltage vebo -5 v collector current (dc) ic -3 a collector current (pulse) ic -7 a base current (dc) ib -600 ma total power dissipation(t c=25oc) pd 10 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) to-251 dimensions in inches and (millimeters) .284(7.20).268(6.80) .217(5.50).205(5.20) .268(6.80).252(6.40) .256 (6.50) min .035 (0.90) max .032 (0.80) max .181 (4.60) typ .095(2.40).087(2.20) .059(1.50).035(0.90) .024(0.60).018(0.45) .022(0.55).018(0.45) .063(1.60).055(1.40) 1 2 3 2 characteristic symbol min typ max unit test conditions collector-base breakdown voltage bvcbo -40 - - v ic=-100ma, ie=0 collector-emitter breakdown voltage bvceo -30 - - v ic=-1ma, ib=0 emitter-base breakdown voltage bvebo -5 - - v ie=-10ma, ic=0 collector cutoff current icbo - - -1 ma vcb =-30v, ie=0 emitter cutoff current iebo - - -1 ma veb =-3v, ic=0 collector-emitter saturation voltage (1) vce(sat) - -0.3 -0.5 v ic=-2a, ib=-0.2a base-emitter saturation voltage (1) vbe(sat) - -1 -2 v ic=-2a, ib=-0.2a dc current gain(1) hfe1 30 - - - ic=-20ma, vce=-2v hfe2 100 - 500 - ic=-1a, vce=-2v transition frequency ft - 80 - mhz ic=-0.1a, vce =-5v, f=100mhz output capacitance cob - 55 - pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank q p e range 100~200 160~320 250~500 classification of hfe2
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